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Technological Process and Wafer Classification of Taiming LED Chips
- Categories:Industry News
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- Time of issue:2019-07-16 08:51
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(Summary description)Overthepastdecade,inordertodevelopbluehighbrightnesslightemittingdiodes,researchersallovertheworldhavedevotedthemselvestothedevelopmentofbluehighbrightnesslightemittingdiodes.CommercialproductssuchasblueandgreenLEDandLDshowthepotentialofIII-Velements. AmongthecurrentcommercialLEDmaterialsandepitaxytechnologies,mostoftheepitaxytechnologiesofredandgreenlightemittingdiodesareliquidphaseepitaxy,whilethegrowthofGaAsPmaterialsbygasphaseepitaxyisstillthemainmethodforyellowandorangelightemittingdiodes. Generallyspeaking,thegrowthofGaNrequiresahightemperaturetointerrupttheN-HbondingsolutionofNH3.Ontheotherhand,kineticsimulationalsoshowsthatNH3andMOGasreacttoproducenon-volatileby-products. TheprocessflowofLEDepitaxywaferisasfollows: Substrate-StructureDesign-BufferLayerGrowth-N-GaNLayerGrowth-MultipleQuantumWellLuminescenceLayerGeneration-P-GaNLayerGrowth-Annealing-Detection(Photofluorescence,X-ray)-EpitaxySheet; Epitaxysheet-design,fabricationmask-photolithography-ionetching-Ntypeelectrode(coating,annealing,etching)-Ptypeelectrode(coating,annealing,etching)-Scratch-chipsortingandgrading Thedetailsareasfollows: Fixed:Fixedthesinglecrystalsiliconrodontheprocessingtable. Slice:Thesinglecrystalsiliconrodiscutintothinsiliconwaferswithprecisegeometricsize.Thesiliconpowderproducedinthisprocessisleachedbywatertoproducewastewaterandsiliconslag. Annealing:Dual-stationthermaloxidationfurnaceissweptbynitrogenandheatedto300-500Cbyinfrared.Thesurfaceofsiliconwaferreactswithoxygentoformasilicaprotectivelayeronthesurfaceofsiliconwafer. Chamfer:Theannealedsiliconwaferistrimmedintoacirculararctopreventedgecrackingandlatticedefects,andtoincreasetheflatnessoftheepitaxylayerandphotoresistivelayer.Thesiliconpowderproducedinthisprocessisleachedbywatertoproducewastewaterandsiliconslag. Gradingtest:Toensurethespecificationsandqualityofsiliconwafers,itistested.Therewillbewastehere. Grinding:Thesawingmarksandsurfacedamagelayerproducedbyslicingandwheelgrindingareremovedbyusinggrindingtablets,whichcaneffectivelyimprovethecurvature,flatnessandparallelismofsinglecrystalsiliconwafersandachieveaspecificationthatcanbeprocessedduringpolishingprocess.Thisprocessproduceswastegrindingtablets. Cleaning:Theorganicimpuritiesonthesurfaceofsiliconwafercanberemovedbydissolvingorganicsolventsandcombiningwithultrasoniccleaningtechnology.Thisprocessproducesorganicwastegasesandorganicsolvents. RCAcleaning:Removeparticulatematterandmetalionsfromsiliconwafersurfacebymulti-channelcleaning. Thespecificprocessflowisasfollows: SPMcleaning:SPMsolutioniscomposedofH2SO4solutionandH22solutioninproportion.SPMsolutionhasstrongoxidationability.ItcandissolvemetalincleaningsolutionafteroxidationandoxidizeorganicpollutantsintoCO2andH2.CleaningsiliconwaferwithSPMcanremoveorganicdirtandsomemetalsonthesurfaceofsiliconwafer.Sulfuricacidmistandwastesulfuricacidareproducedinthisprocess. DHFcleaning:Acertainconcentrationofhydrofluoricacidisusedtoremovethenaturaloxidefilmonthesurfaceofsiliconwafer,andthemetaladheringtothenaturaloxidefilmisalsodissolvedintothecleaningsolution,whileDHFinhibitstheformationoftheoxidefilm.Thisprocessproduceshydrogenfluorideandwastehydrofluoricacid. APMcleaning:APMsolutionconsistsofacertainproportionofNH4OHsolutionandH2O2solution.Oxygenfilmisformedonthesurfaceofsiliconwaferduetotheoxidationofhydrogenperoxide(about6nmishydrophilic).TheoxidefilmiscorrodedbyNH4OH,andthenoxidizedimmediatelyaftercorrosion.Oxygenationandcorrosionoccurrepeatedly,sotheparticlesandmetalsattachedtothesurfaceofsiliconwaferalsofollow.Thecorrosionlayerfallsintothecleaningliquid.Ammoniagasandwasteammoniawaterareproducedhere.HPMcleaning:HPMconsistingofHClsolutionandH2O2solutioninacertainproportionisusedtoremovesodium,iron,magnesiumandzinccontaminantsonsiliconsurface.Hydrogenchlorideandwastehydrochloricacidareproducedinthisprocess. DHFcleaning:Removetheoxidefilmonthesiliconsurfacefromthepreviousprocess. Abrasivetesting:inspectthequalityofsiliconwafersaftergrindingandRCAcleaning.Ifthewafersdonotmeettherequirements,thenewgrindingandRCAcleaningwillbecarriedout. CorrosionA/B:Aftermechanicalprocessingsuchasslicingandgrinding,thedamagelayeronthewafersurfacecausedbyprocessingstressisusuallyremovedbychemicalcorrosion.CorrosionAisacidiccorrosion.Thedamagedlayerisremovedbymixedacidsolutiontoproducehydrogenfluoride,NOXandwastemixedacid.CorrosionBisalkalinecorrosion,andthedamagedlayerisremovedbysodiumhydroxidesolutiontoproducewastealkalisolution.SomesiliconwafersinthisprojectarecorrodedAandsomearecorrodedB.Classificationmonitoring:damagedetectionofsiliconwafersandre-corrosionofdamagedsiliconwafers. Roughpolishing:Thedamagedlayerisremovedwithasingleabrasive,andtheremovalamountisgenerally10-20um.Coarsewasteliquidisproducedhere. Finepolishing:Thesurfaceroughnessofsiliconwafercanbeimprovedbyusingfinegrindingagent.Generally,theremovalamountislessthan1um,whichleadstohighflatnessofsiliconwafer.Producerefinedwasteliquid.
Technological Process and Wafer Classification of Taiming LED Chips
(Summary description)Overthepastdecade,inordertodevelopbluehighbrightnesslightemittingdiodes,researchersallovertheworldhavedevotedthemselvestothedevelopmentofbluehighbrightnesslightemittingdiodes.CommercialproductssuchasblueandgreenLEDandLDshowthepotentialofIII-Velements. AmongthecurrentcommercialLEDmaterialsandepitaxytechnologies,mostoftheepitaxytechnologiesofredandgreenlightemittingdiodesareliquidphaseepitaxy,whilethegrowthofGaAsPmaterialsbygasphaseepitaxyisstillthemainmethodforyellowandorangelightemittingdiodes. Generallyspeaking,thegrowthofGaNrequiresahightemperaturetointerrupttheN-HbondingsolutionofNH3.Ontheotherhand,kineticsimulationalsoshowsthatNH3andMOGasreacttoproducenon-volatileby-products. TheprocessflowofLEDepitaxywaferisasfollows: Substrate-StructureDesign-BufferLayerGrowth-N-GaNLayerGrowth-MultipleQuantumWellLuminescenceLayerGeneration-P-GaNLayerGrowth-Annealing-Detection(Photofluorescence,X-ray)-EpitaxySheet; Epitaxysheet-design,fabricationmask-photolithography-ionetching-Ntypeelectrode(coating,annealing,etching)-Ptypeelectrode(coating,annealing,etching)-Scratch-chipsortingandgrading Thedetailsareasfollows: Fixed:Fixedthesinglecrystalsiliconrodontheprocessingtable. Slice:Thesinglecrystalsiliconrodiscutintothinsiliconwaferswithprecisegeometricsize.Thesiliconpowderproducedinthisprocessisleachedbywatertoproducewastewaterandsiliconslag. Annealing:Dual-stationthermaloxidationfurnaceissweptbynitrogenandheatedto300-500Cbyinfrared.Thesurfaceofsiliconwaferreactswithoxygentoformasilicaprotectivelayeronthesurfaceofsiliconwafer. Chamfer:Theannealedsiliconwaferistrimmedintoacirculararctopreventedgecrackingandlatticedefects,andtoincreasetheflatnessoftheepitaxylayerandphotoresistivelayer.Thesiliconpowderproducedinthisprocessisleachedbywatertoproducewastewaterandsiliconslag. Gradingtest:Toensurethespecificationsandqualityofsiliconwafers,itistested.Therewillbewastehere. Grinding:Thesawingmarksandsurfacedamagelayerproducedbyslicingandwheelgrindingareremovedbyusinggrindingtablets,whichcaneffectivelyimprovethecurvature,flatnessandparallelismofsinglecrystalsiliconwafersandachieveaspecificationthatcanbeprocessedduringpolishingprocess.Thisprocessproduceswastegrindingtablets. Cleaning:Theorganicimpuritiesonthesurfaceofsiliconwafercanberemovedbydissolvingorganicsolventsandcombiningwithultrasoniccleaningtechnology.Thisprocessproducesorganicwastegasesandorganicsolvents. RCAcleaning:Removeparticulatematterandmetalionsfromsiliconwafersurfacebymulti-channelcleaning. Thespecificprocessflowisasfollows: SPMcleaning:SPMsolutioniscomposedofH2SO4solutionandH22solutioninproportion.SPMsolutionhasstrongoxidationability.ItcandissolvemetalincleaningsolutionafteroxidationandoxidizeorganicpollutantsintoCO2andH2.CleaningsiliconwaferwithSPMcanremoveorganicdirtandsomemetalsonthesurfaceofsiliconwafer.Sulfuricacidmistandwastesulfuricacidareproducedinthisprocess. DHFcleaning:Acertainconcentrationofhydrofluoricacidisusedtoremovethenaturaloxidefilmonthesurfaceofsiliconwafer,andthemetaladheringtothenaturaloxidefilmisalsodissolvedintothecleaningsolution,whileDHFinhibitstheformationoftheoxidefilm.Thisprocessproduceshydrogenfluorideandwastehydrofluoricacid. APMcleaning:APMsolutionconsistsofacertainproportionofNH4OHsolutionandH2O2solution.Oxygenfilmisformedonthesurfaceofsiliconwaferduetotheoxidationofhydrogenperoxide(about6nmishydrophilic).TheoxidefilmiscorrodedbyNH4OH,andthenoxidizedimmediatelyaftercorrosion.Oxygenationandcorrosionoccurrepeatedly,sotheparticlesandmetalsattachedtothesurfaceofsiliconwaferalsofollow.Thecorrosionlayerfallsintothecleaningliquid.Ammoniagasandwasteammoniawaterareproducedhere.HPMcleaning:HPMconsistingofHClsolutionandH2O2solutioninacertainproportionisusedtoremovesodium,iron,magnesiumandzinccontaminantsonsiliconsurface.Hydrogenchlorideandwastehydrochloricacidareproducedinthisprocess. DHFcleaning:Removetheoxidefilmonthesiliconsurfacefromthepreviousprocess. Abrasivetesting:inspectthequalityofsiliconwafersaftergrindingandRCAcleaning.Ifthewafersdonotmeettherequirements,thenewgrindingandRCAcleaningwillbecarriedout. CorrosionA/B:Aftermechanicalprocessingsuchasslicingandgrinding,thedamagelayeronthewafersurfacecausedbyprocessingstressisusuallyremovedbychemicalcorrosion.CorrosionAisacidiccorrosion.Thedamagedlayerisremovedbymixedacidsolutiontoproducehydrogenfluoride,NOXandwastemixedacid.CorrosionBisalkalinecorrosion,andthedamagedlayerisremovedbysodiumhydroxidesolutiontoproducewastealkalisolution.SomesiliconwafersinthisprojectarecorrodedAandsomearecorrodedB.Classificationmonitoring:damagedetectionofsiliconwafersandre-corrosionofdamagedsiliconwafers. Roughpolishing:Thedamagedlayerisremovedwithasingleabrasive,andtheremovalamountisgenerally10-20um.Coarsewasteliquidisproducedhere. Finepolishing:Thesurfaceroughnessofsiliconwafercanbeimprovedbyusingfinegrindingagent.Generally,theremovalamountislessthan1um,whichleadstohighflatnessofsiliconwafer.Producerefinedwasteliquid.
- Categories:Industry News
- Author:
- Origin:
- Time of issue:2019-07-16 08:51
- Views:
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通用底部
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About us
- Company profile Honor Plant
-
Products
- SMD LED Digital tube Triode ......
-
Talent
- Idea Recruitment
Service hotline

Copyright © Dongguan Taiming Photoelectric Technology Co., Ltd. All Rights Reserved. 粤ICP备15044056号-2
