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Technological Process and Wafer Classification of Taiming LED Chips
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Technological Process and Wafer Classification of Taiming LED Chips

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  • Time of issue:2019-07-16 08:51
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(Summary description)Overthepastdecade,inordertodevelopbluehighbrightnesslightemittingdiodes,researchersallovertheworldhavedevotedthemselvestothedevelopmentofbluehighbrightnesslightemittingdiodes.CommercialproductssuchasblueandgreenLEDandLDshowthepotentialofIII-Velements.     AmongthecurrentcommercialLEDmaterialsandepitaxytechnologies,mostoftheepitaxytechnologiesofredandgreenlightemittingdiodesareliquidphaseepitaxy,whilethegrowthofGaAsPmaterialsbygasphaseepitaxyisstillthemainmethodforyellowandorangelightemittingdiodes.     Generallyspeaking,thegrowthofGaNrequiresahightemperaturetointerrupttheN-HbondingsolutionofNH3.Ontheotherhand,kineticsimulationalsoshowsthatNH3andMOGasreacttoproducenon-volatileby-products.     TheprocessflowofLEDepitaxywaferisasfollows:     Substrate-StructureDesign-BufferLayerGrowth-N-GaNLayerGrowth-MultipleQuantumWellLuminescenceLayerGeneration-P-GaNLayerGrowth-Annealing-Detection(Photofluorescence,X-ray)-EpitaxySheet;     Epitaxysheet-design,fabricationmask-photolithography-ionetching-Ntypeelectrode(coating,annealing,etching)-Ptypeelectrode(coating,annealing,etching)-Scratch-chipsortingandgrading     Thedetailsareasfollows:     Fixed:Fixedthesinglecrystalsiliconrodontheprocessingtable.     Slice:Thesinglecrystalsiliconrodiscutintothinsiliconwaferswithprecisegeometricsize.Thesiliconpowderproducedinthisprocessisleachedbywatertoproducewastewaterandsiliconslag.     Annealing:Dual-stationthermaloxidationfurnaceissweptbynitrogenandheatedto300-500Cbyinfrared.Thesurfaceofsiliconwaferreactswithoxygentoformasilicaprotectivelayeronthesurfaceofsiliconwafer.     Chamfer:Theannealedsiliconwaferistrimmedintoacirculararctopreventedgecrackingandlatticedefects,andtoincreasetheflatnessoftheepitaxylayerandphotoresistivelayer.Thesiliconpowderproducedinthisprocessisleachedbywatertoproducewastewaterandsiliconslag.     Gradingtest:Toensurethespecificationsandqualityofsiliconwafers,itistested.Therewillbewastehere.     Grinding:Thesawingmarksandsurfacedamagelayerproducedbyslicingandwheelgrindingareremovedbyusinggrindingtablets,whichcaneffectivelyimprovethecurvature,flatnessandparallelismofsinglecrystalsiliconwafersandachieveaspecificationthatcanbeprocessedduringpolishingprocess.Thisprocessproduceswastegrindingtablets.     Cleaning:Theorganicimpuritiesonthesurfaceofsiliconwafercanberemovedbydissolvingorganicsolventsandcombiningwithultrasoniccleaningtechnology.Thisprocessproducesorganicwastegasesandorganicsolvents.     RCAcleaning:Removeparticulatematterandmetalionsfromsiliconwafersurfacebymulti-channelcleaning.     Thespecificprocessflowisasfollows:     SPMcleaning:SPMsolutioniscomposedofH2SO4solutionandH22solutioninproportion.SPMsolutionhasstrongoxidationability.ItcandissolvemetalincleaningsolutionafteroxidationandoxidizeorganicpollutantsintoCO2andH2.CleaningsiliconwaferwithSPMcanremoveorganicdirtandsomemetalsonthesurfaceofsiliconwafer.Sulfuricacidmistandwastesulfuricacidareproducedinthisprocess.     DHFcleaning:Acertainconcentrationofhydrofluoricacidisusedtoremovethenaturaloxidefilmonthesurfaceofsiliconwafer,andthemetaladheringtothenaturaloxidefilmisalsodissolvedintothecleaningsolution,whileDHFinhibitstheformationoftheoxidefilm.Thisprocessproduceshydrogenfluorideandwastehydrofluoricacid.     APMcleaning:APMsolutionconsistsofacertainproportionofNH4OHsolutionandH2O2solution.Oxygenfilmisformedonthesurfaceofsiliconwaferduetotheoxidationofhydrogenperoxide(about6nmishydrophilic).TheoxidefilmiscorrodedbyNH4OH,andthenoxidizedimmediatelyaftercorrosion.Oxygenationandcorrosionoccurrepeatedly,sotheparticlesandmetalsattachedtothesurfaceofsiliconwaferalsofollow.Thecorrosionlayerfallsintothecleaningliquid.Ammoniagasandwasteammoniawaterareproducedhere.HPMcleaning:HPMconsistingofHClsolutionandH2O2solutioninacertainproportionisusedtoremovesodium,iron,magnesiumandzinccontaminantsonsiliconsurface.Hydrogenchlorideandwastehydrochloricacidareproducedinthisprocess.     DHFcleaning:Removetheoxidefilmonthesiliconsurfacefromthepreviousprocess.     Abrasivetesting:inspectthequalityofsiliconwafersaftergrindingandRCAcleaning.Ifthewafersdonotmeettherequirements,thenewgrindingandRCAcleaningwillbecarriedout.     CorrosionA/B:Aftermechanicalprocessingsuchasslicingandgrinding,thedamagelayeronthewafersurfacecausedbyprocessingstressisusuallyremovedbychemicalcorrosion.CorrosionAisacidiccorrosion.Thedamagedlayerisremovedbymixedacidsolutiontoproducehydrogenfluoride,NOXandwastemixedacid.CorrosionBisalkalinecorrosion,andthedamagedlayerisremovedbysodiumhydroxidesolutiontoproducewastealkalisolution.SomesiliconwafersinthisprojectarecorrodedAandsomearecorrodedB.Classificationmonitoring:damagedetectionofsiliconwafersandre-corrosionofdamagedsiliconwafers.     Roughpolishing:Thedamagedlayerisremovedwithasingleabrasive,andtheremovalamountisgenerally10-20um.Coarsewasteliquidisproducedhere.     Finepolishing:Thesurfaceroughnessofsiliconwafercanbeimprovedbyusingfinegrindingagent.Generally,theremovalamountislessthan1um,whichleadstohighflatnessofsiliconwafer.Producerefinedwasteliquid.

Technological Process and Wafer Classification of Taiming LED Chips

(Summary description)Overthepastdecade,inordertodevelopbluehighbrightnesslightemittingdiodes,researchersallovertheworldhavedevotedthemselvestothedevelopmentofbluehighbrightnesslightemittingdiodes.CommercialproductssuchasblueandgreenLEDandLDshowthepotentialofIII-Velements.     AmongthecurrentcommercialLEDmaterialsandepitaxytechnologies,mostoftheepitaxytechnologiesofredandgreenlightemittingdiodesareliquidphaseepitaxy,whilethegrowthofGaAsPmaterialsbygasphaseepitaxyisstillthemainmethodforyellowandorangelightemittingdiodes.     Generallyspeaking,thegrowthofGaNrequiresahightemperaturetointerrupttheN-HbondingsolutionofNH3.Ontheotherhand,kineticsimulationalsoshowsthatNH3andMOGasreacttoproducenon-volatileby-products.     TheprocessflowofLEDepitaxywaferisasfollows:     Substrate-StructureDesign-BufferLayerGrowth-N-GaNLayerGrowth-MultipleQuantumWellLuminescenceLayerGeneration-P-GaNLayerGrowth-Annealing-Detection(Photofluorescence,X-ray)-EpitaxySheet;     Epitaxysheet-design,fabricationmask-photolithography-ionetching-Ntypeelectrode(coating,annealing,etching)-Ptypeelectrode(coating,annealing,etching)-Scratch-chipsortingandgrading     Thedetailsareasfollows:     Fixed:Fixedthesinglecrystalsiliconrodontheprocessingtable.     Slice:Thesinglecrystalsiliconrodiscutintothinsiliconwaferswithprecisegeometricsize.Thesiliconpowderproducedinthisprocessisleachedbywatertoproducewastewaterandsiliconslag.     Annealing:Dual-stationthermaloxidationfurnaceissweptbynitrogenandheatedto300-500Cbyinfrared.Thesurfaceofsiliconwaferreactswithoxygentoformasilicaprotectivelayeronthesurfaceofsiliconwafer.     Chamfer:Theannealedsiliconwaferistrimmedintoacirculararctopreventedgecrackingandlatticedefects,andtoincreasetheflatnessoftheepitaxylayerandphotoresistivelayer.Thesiliconpowderproducedinthisprocessisleachedbywatertoproducewastewaterandsiliconslag.     Gradingtest:Toensurethespecificationsandqualityofsiliconwafers,itistested.Therewillbewastehere.     Grinding:Thesawingmarksandsurfacedamagelayerproducedbyslicingandwheelgrindingareremovedbyusinggrindingtablets,whichcaneffectivelyimprovethecurvature,flatnessandparallelismofsinglecrystalsiliconwafersandachieveaspecificationthatcanbeprocessedduringpolishingprocess.Thisprocessproduceswastegrindingtablets.     Cleaning:Theorganicimpuritiesonthesurfaceofsiliconwafercanberemovedbydissolvingorganicsolventsandcombiningwithultrasoniccleaningtechnology.Thisprocessproducesorganicwastegasesandorganicsolvents.     RCAcleaning:Removeparticulatematterandmetalionsfromsiliconwafersurfacebymulti-channelcleaning.     Thespecificprocessflowisasfollows:     SPMcleaning:SPMsolutioniscomposedofH2SO4solutionandH22solutioninproportion.SPMsolutionhasstrongoxidationability.ItcandissolvemetalincleaningsolutionafteroxidationandoxidizeorganicpollutantsintoCO2andH2.CleaningsiliconwaferwithSPMcanremoveorganicdirtandsomemetalsonthesurfaceofsiliconwafer.Sulfuricacidmistandwastesulfuricacidareproducedinthisprocess.     DHFcleaning:Acertainconcentrationofhydrofluoricacidisusedtoremovethenaturaloxidefilmonthesurfaceofsiliconwafer,andthemetaladheringtothenaturaloxidefilmisalsodissolvedintothecleaningsolution,whileDHFinhibitstheformationoftheoxidefilm.Thisprocessproduceshydrogenfluorideandwastehydrofluoricacid.     APMcleaning:APMsolutionconsistsofacertainproportionofNH4OHsolutionandH2O2solution.Oxygenfilmisformedonthesurfaceofsiliconwaferduetotheoxidationofhydrogenperoxide(about6nmishydrophilic).TheoxidefilmiscorrodedbyNH4OH,andthenoxidizedimmediatelyaftercorrosion.Oxygenationandcorrosionoccurrepeatedly,sotheparticlesandmetalsattachedtothesurfaceofsiliconwaferalsofollow.Thecorrosionlayerfallsintothecleaningliquid.Ammoniagasandwasteammoniawaterareproducedhere.HPMcleaning:HPMconsistingofHClsolutionandH2O2solutioninacertainproportionisusedtoremovesodium,iron,magnesiumandzinccontaminantsonsiliconsurface.Hydrogenchlorideandwastehydrochloricacidareproducedinthisprocess.     DHFcleaning:Removetheoxidefilmonthesiliconsurfacefromthepreviousprocess.     Abrasivetesting:inspectthequalityofsiliconwafersaftergrindingandRCAcleaning.Ifthewafersdonotmeettherequirements,thenewgrindingandRCAcleaningwillbecarriedout.     CorrosionA/B:Aftermechanicalprocessingsuchasslicingandgrinding,thedamagelayeronthewafersurfacecausedbyprocessingstressisusuallyremovedbychemicalcorrosion.CorrosionAisacidiccorrosion.Thedamagedlayerisremovedbymixedacidsolutiontoproducehydrogenfluoride,NOXandwastemixedacid.CorrosionBisalkalinecorrosion,andthedamagedlayerisremovedbysodiumhydroxidesolutiontoproducewastealkalisolution.SomesiliconwafersinthisprojectarecorrodedAandsomearecorrodedB.Classificationmonitoring:damagedetectionofsiliconwafersandre-corrosionofdamagedsiliconwafers.     Roughpolishing:Thedamagedlayerisremovedwithasingleabrasive,andtheremovalamountisgenerally10-20um.Coarsewasteliquidisproducedhere.     Finepolishing:Thesurfaceroughnessofsiliconwafercanbeimprovedbyusingfinegrindingagent.Generally,theremovalamountislessthan1um,whichleadstohighflatnessofsiliconwafer.Producerefinedwasteliquid.

  • Categories:Industry News
  • Author:
  • Origin:
  • Time of issue:2019-07-16 08:51
  • Views:
Information
Over the past decade, in order to develop blue high brightness light emitting diodes, researchers all over the world have devoted themselves to the development of blue high brightness light emitting diodes. Commercial products such as blue and green LED and LD show the potential of III-V elements.
 
 
 
 
 
Among the current commercial LED materials and epitaxy technologies, most of the epitaxy technologies of red and green light emitting diodes are liquid phase epitaxy, while the growth of GaAsP materials by gas phase epitaxy is still the main method for yellow and orange light emitting diodes.
 
 
 
 
 
Generally speaking, the growth of Ga N requires a high temperature to interrupt the N-H bonding solution of NH3. On the other hand, kinetic simulation also shows that NH3 and MO Gas react to produce non-volatile by-products.
 
 
 
 
 
The process flow of LED epitaxy wafer is as follows:
 
 
 
 
 
Substrate-Structure Design-Buffer Layer Growth-N-GaN Layer Growth-Multiple Quantum Well Luminescence Layer Generation-P-GaN Layer Growth-Annealing-Detection (Photofluorescence, X-ray) -Epitaxy Sheet;
 
 
 
 
 
Epitaxy sheet - design, fabrication mask - photolithography - ion etching - N type electrode (coating, annealing, etching) - P type electrode (coating, annealing, etching) - Scratch - chip sorting and grading
 
 
 
 
 
The details are as follows:
 
 
 
 
 
Fixed: Fixed the single crystal silicon rod on the processing table.
 
 
 
 
 
Slice: The single crystal silicon rod is cut into thin silicon wafers with precise geometric size. The silicon powder produced in this process is leached by water to produce waste water and silicon slag.
 
 
 
 
 
Annealing: Dual-station thermal oxidation furnace is swept by nitrogen and heated to 300-500 C by infrared. The surface of silicon wafer reacts with oxygen to form a silica protective layer on the surface of silicon wafer.
 
 
 
 
 
Chamfer: The annealed silicon wafer is trimmed into a circular arc to prevent edge cracking and lattice defects, and to increase the flatness of the epitaxy layer and photoresistive layer. The silicon powder produced in this process is leached by water to produce waste water and silicon slag.
 
 
 
 
 
Grading test: To ensure the specifications and quality of silicon wafers, it is tested. There will be waste here.
 
 
 
 
 
Grinding: The sawing marks and surface damage layer produced by slicing and wheel grinding are removed by using grinding tablets, which can effectively improve the curvature, flatness and parallelism of single crystal silicon wafers and achieve a specification that can be processed during polishing process. This process produces waste grinding tablets.
 
 
 
 
 
Cleaning: The organic impurities on the surface of silicon wafer can be removed by dissolving organic solvents and combining with ultrasonic cleaning technology. This process produces organic waste gases and organic solvents.
 
 
 
 
 
RCA cleaning: Remove particulate matter and metal ions from silicon wafer surface by multi-channel cleaning.
 
 
 
 
 
The specific process flow is as follows:
 
 
 
 
 
SPM cleaning: SPM solution is composed of H2SO4 solution and H22 solution in proportion. SPM solution has strong oxidation ability. It can dissolve metal in cleaning solution after oxidation and oxidize organic pollutants into CO2 and H2. Cleaning silicon wafer with SPM can remove organic dirt and some metals on the surface of silicon wafer. Sulfuric acid mist and waste sulfuric acid are produced in this process.
 
 
 
 
 
DHF cleaning: A certain concentration of hydrofluoric acid is used to remove the natural oxide film on the surface of silicon wafer, and the metal adhering to the natural oxide film is also dissolved into the cleaning solution, while DHF inhibits the formation of the oxide film. This process produces hydrogen fluoride and waste hydrofluoric acid.
 
 
 
 
 
APM cleaning: APM solution consists of a certain proportion of NH4OH solution and H2O2 solution. Oxygen film is formed on the surface of silicon wafer due to the oxidation of hydrogen peroxide (about 6 nm is hydrophilic). The oxide film is corroded by NH4OH, and then oxidized immediately after corrosion. Oxygenation and corrosion occur repeatedly, so the particles and metals attached to the surface of silicon wafer also follow. The corrosion layer falls into the cleaning liquid. Ammonia gas and waste ammonia water are produced here. HPM cleaning: HPM consisting of HCl solution and H2O2 solution in a certain proportion is used to remove sodium, iron, magnesium and zinc contaminants on silicon surface. Hydrogen chloride and waste hydrochloric acid are produced in this process.
 
 
 
 
 
DHF cleaning: Remove the oxide film on the silicon surface from the previous process.
 
 
 
 
 
Abrasive testing: inspect the quality of silicon wafers after grinding and RCA cleaning. If the wafers do not meet the requirements, the new grinding and RCA cleaning will be carried out.
 
 
 
 
 
Corrosion A/B: After mechanical processing such as slicing and grinding, the damage layer on the wafer surface caused by processing stress is usually removed by chemical corrosion. Corrosion A is acidic corrosion. The damaged layer is removed by mixed acid solution to produce hydrogen fluoride, NOX and waste mixed acid. Corrosion B is alkaline corrosion, and the damaged layer is removed by sodium hydroxide solution to produce waste alkali solution. Some silicon wafers in this project are corroded A and some are corroded B. Classification monitoring: damage detection of silicon wafers and re-corrosion of damaged silicon wafers.
 
 
 
 
 
Rough polishing: The damaged layer is removed with a single abrasive, and the removal amount is generally 10-20 um. Coarse waste liquid is produced here.
 
 
 
 
 
Fine polishing: The surface roughness of silicon wafer can be improved by using fine grinding agent. Generally, the removal amount is less than 1um, which leads to high flatness of silicon wafer. Produce refined waste liquid.
 
 
 
 
 
Inspection: Check whether the silicon wafer meets the requirements, if not, polish or RCA cleaning.
 
 
 
 
 
Detection: Check whether the surface of silicon wafer is clean or not. If the surface is not clean, it will be scrubbed until it is clean.
 
 
 
 
 
Packaging: Single crystal silicon polishing wafers are packaged.
 
 
 
 
 
The chip is a larger epitaxy before it is made into a small chip, so the chip manufacturing process has the cutting speed, that is, to cut the epitaxy into a small chip. It should be a link in the process of LED production.
 
 
 
 
 
The function of LED chip:
 
 
 
 
 
LED wafer is the main material of LED. LED mainly depends on wafer.

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Time of issue:2019-05-17 00:00:00

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Welcome your consultation!

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